| Mfg Part Number: IDT8M824S70CB | Manufacturer: Integrated Device Technology Inc | NSN : 5962-01-303-3554 |
| NIIN : 013033554 | Item Name : microcircuit memory | CAGE Code : 61772 |
| FSC : 5962 Microcircuits Electronic |
Thank you for choosing to source for Microcircuit Memory part IDT8M824S70CB from Procurement Aces. We offer access to an inventory of over 2 billion new, used, obsolete, and hard-to-find items like part IDT8M824S70CB with the NSN 5962-01-303-3554 under FSC 5962 Microcircuits Electronic. Furthermore, we source reliably from a list of trusted manufacturers like Integrated Device Technology Inc, so you can rest assured that our services and products are of the highest caliber. For your ease-of-purchasing, we also ship all items to you with their qualifying certifications and manufacturing trace documentation, as applicable. All items in our database are currently available and ready-for-purchase, so we invite you to explore our website’s listings for any parts you wish to procure.
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| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 580 INCHES MINIMUM AND 1 620 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 580 INCHES MINIMUM AND 0 600 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 180 INCHES MINIMUM AND 0 240 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND STATIC OPERATION AND HIGH SPEED AND WENABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN28 INPUT |
| MEMORY | CRHL | BIT QUANTITY1048576 |
| MEMORY | CSWJ | WORD QUANTITY131072 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC70 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 70 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY32 PRINTED CIRCUIT |
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